SCOPUS 정보 검색 플랫폼

Volumn 37-38, Issue , 1997, Pages 499-506

Formation of thin surface films of Ni-, V- and Co-silicide by low-energy implantation with a metal vapour vacuum arc ion source

(3) Zhang, Yanwen a Whitlow, Harry J a Zhang, Tonghe b

a LUND INSTITUTE OF TECHNOLOGY (Sweden)

b BEIJING NORMAL UNIVERSITY (China)

Author keywords

Ion beam synthesis; Ions; Metal vapour vacuum arc; Phase formation; Resistivity; Rutherford backscattering spectrometry; Suicides; Surface layers

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; ION BEAMS; ION SOURCES; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STOICHIOMETRY; THIN FILMS;

METAL VAPOR VACUUM ARCS; SHEET RESISTANCE; SILICIDES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 4243883862 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(97)00152-4 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.