High resolution photoemission study of C60 on Si(111) as a precursor of SiC growth

Surface Science

Volumn 454, Issue 1, 2000, Pages 832-836

  Pesci, A ^a   Ferrari, L ^a   Comicioli, C ^a   Pedio, M ^a   Cepek, C ^b   Schiavuta, P ^b   Pivetta, M ^b   Sancrotti, M ^b  

^a CNR   (Italy)

^b LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FULLERENES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

HIGH RESOLUTION PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0033721502     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00076-5     Document Type: Article

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