PdGe-based ohmic contact on n-GaAs with highly and poorly doped layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2546-2549

  Lim, Jong Won ^a   Mun, Jae Kyoung ^a   An, Sung Jong ^a   Nam, Sungun ^a   Kwak, Myeong Hyeon ^a   Kim, Haecheon ^a   Lee, Jae Jin ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Contact resistance; GaAs; Ohmic contact; Pd Ge Ti Pt; Thermal stability

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; GERMANIUM; PALLADIUM; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TITANIUM;

PALLADIUM GERMANIDE;

OHMIC CONTACTS;

EID: 0033721459     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2546     Document Type: Article

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