A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistor

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 497-502

  Kwak, J S ^a   Baik, H K ^a   Lee, J L ^b   Park, C G ^b   Kim, H ^c   Suh, K S ^c  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Gaas MESFET; Ohmic contact; Pd Ge Ti Au

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); MESFET DEVICES; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AUGER DEPTH PROFILES;

OHMIC CONTACTS;

EID: 13544276513     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08967-5     Document Type: Article

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