Incommensurate nature of epitaxial titanium disilicide islands on Si(001)

Surface Science

Volumn 457, Issue 1, 2000, Pages 147-156

  Briggs, G A D ^a   Basile, D P ^a   Medeiros Ribeiro, G ^a   Kamins, T I ^a   Ohlberg, D A A ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOIRE FRINGES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

RELAXED SILICIDE LATTICE PARAMETERS; SURFACE RECONSTRUCTIONS; TITANIUM DISILICIDE;

TITANIUM COMPOUNDS;

EID: 0033721367     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00347-2     Document Type: Article

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