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Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 567-571

Role of impurity bands and electron-phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

(6) Gurskii, A L a Voitikov, S V a Hamadeh, H b Kalisch, H b Heuken, M c Heime, K b

a B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; ELECTRONS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; NITROGEN; PHONONS; PHOTOLUMINESCENCE; SPECTROSCOPY; TEMPERATURE;

CONDUCTION BAND TAIL; DONOR ACCEPTOR PAIR RECOMBINATION; ELECTRON PHONON INTERACTION; IMPURITY BANDS; PHOTOLUMINESCENCE SPECTROSCOPY; POTENTIAL FLUCTUATION MODEL;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033717480 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00153-6 Document Type: Article

Times cited : (3)

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