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Volumn 174, Issue 1-4, 1997, Pages 757-762

Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe

(9) Gurskii, A L a Marko, I P a Yuvchenko, V N a Yablonskii, G P a Hamadeh, H b Taudt, W b Sollner J b Kalisch, H b Heuken, M b

a B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

b RWTH AACHEN UNIVERSITY (Germany)

Author keywords

Doping; Electron hole plasma; MOVPE; Photoluminescence; ZnSe

Indexed keywords

COMPOSITION EFFECTS; CONTINUOUS WAVE LASERS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LASER BEAM EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS;

ELECTRON HOLE PLASMA (EHP); HELIUM CADMIUM LASER EXCITATION; PULSED NITROGEN LASER RADIATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031547355 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00027-4 Document Type: Article

Times cited : (3)

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