Development and application of a pin PD with InP passivation structure

SEI Technical Review

Volumn , Issue 45, 1998, Pages 46-50

  Doguchi, Kentaro ^a   Yano, Hiroshi ^b   Sawada, Sosaku ^a   Sekiguchi, Takeshi ^a   Kamiyama, Hiroyuki ^b   Kuroda, Masataka ^b  

^a Optoelectronics R and D Laboratories   (Japan)

^b Fiber Optic Microwave Devices R   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; PASSIVATION; RESISTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

INTEGRATED PIN PHOTODIODES (PD);

PHOTODIODES;

EID: 0031699723     PISSN: 13434349     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. K. Ohnaka, M. Kubo, and J. Shibata: "A Low dark current InGaAs/InP p-i-n photodiode with covered mesa structure," IEEE Trans. Electron Dev., ED-34, pp.199 (1987).
2. K.W. Carey, S.-Y. Wang, J.S.C. Chang, and K. Nauka: "Leakage current in GaInAs/InP photodiodes grown by OMVPE," J. Crystal Growth, 98, pp.90 (1989).
3. S. Takahashi, T. Nakada, K. Kamimura, H. Zama, T. Hattori, and A. Kunioka: "Preparation of a thin silicon nitride layer by photo-CVD and its application to InP MISFET's," Jpn. J. Appl. Phys., 26, pp.1.1606 (1987).
4. P. Boher, M. Renaud, L.J. Van Ijzendoorn, J. Barrier, and Y. Hily: "Structural and electrical properties of silicon nitride films prepared by multipolar plasma-enhanced deposition," J. Appl. Phys., 63(5), pp.1464 (1988).
5. A. Piccirillo, A.L. Gobbi, M. Ferraris, R. Giannetti and P. E. Bagnoli: "Identification of silicon nitride/InGaAs interface states," Appl. Phys. Lett., 56(17), pp.1661 (1990).