Novel surface preparation and post-etch removal technique for InGaAs sidewalls

Materials Research Society Symposium - Proceedings

Volumn 477, Issue , 1997, Pages 317-321

  Tabatabaei, S A ^a   Porkolab, G A ^a   Agarwala, S ^a   Johnson, F G ^a   Merritt, S A ^a   King, O ^a   Dagenais, M ^a   Chen, Y J ^a   Stone, D R ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ETCHING; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES;

INDIUM GALLIUM ARSENIDE; POST ETCH REMOVAL TECHNIQUE;

SEMICONDUCTOR DIODES;

EID: 0030649263     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)