Effects of slurry formulations on chemical-mechanical polishing of low dielectric constant polysiloxanes: Hydrido-organo siloxane and methyl silsesquioxane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 201-207

  Chen, Wen Chang ^a   Yen, Cheng Tyng ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; AMMONIUM COMPOUNDS; CHEMICAL POLISHING; COMPOSITION EFFECTS; MOLECULAR STRUCTURE; PERMITTIVITY; PH EFFECTS; REFRACTIVE INDEX; SILICONES; SODIUM COMPOUNDS; SURFACE ACTIVE AGENTS;

CHEMICAL MECHANICAL POLISHING (CMP); POLYSILOXANE;

PLASTIC FILMS;

EID: 0033715453     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591173     Document Type: Article

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