Defect-induced emission band in CdTe

Journal of Crystal Growth

Volumn 138, Issue 1-4, 1994, Pages 346-351

  Seto, S ^a   Tanaka, A ^b   Takeda, F ^c   Matsuura, K ^c  

^a ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b SUMITOMO METAL MINING CO LTD   (Japan)

^c TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON EMISSION; GAMMA RAYS; MATHEMATICAL MODELS; SOLID STATE PHYSICS;

DISLOCATION BINDLE; DISLOCATION DENSITY; EMISSION BANDS; FRENKEL DEFECTS; RECOMBINATION CENTERS; SEMICONDUCTING CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0028760749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)90831-1     Document Type: Article

References (16)

1. Trapping of hydrogen implanted into titanium
2. Photoluminescence in high-resistivity CdTe : In
3. Photoluminescence of gallium impurity in cadmium telluride
4. Dependence of Excitonic Emission Lines and the 1.47 eV Band on Growth Temperature and Substrate Misorientation in MOCVD-Grown CdTe Films on (100) GaAs