Photoelectrochemical dissolution of N-type silicon

Electrochimica Acta

Volumn 43, Issue 16-17, 1998, Pages 2389-2398

  Kang, Ying ^a   Jorné, Jacob ^a  

^a University of Rochester   (United States)

Author keywords

Doping; Etching; Limiting current; Porous silicon; Tunneling

Indexed keywords

DISSOLUTION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTROLYTIC POLISHING; ELECTRON TUNNELING; ETCHING; LIGHTING; POROUS SILICON;

EFFECTIVE DISSOLUTION VALENCE; LIMITING CURRENTS; PHOTO ANODIZATION; PHOTOELECTROCHEMICAL DISSOLUTION;

ELECTROCHEMISTRY;

EID: 0032310421     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(97)10150-5     Document Type: Article

References (18)

1. C. Levy-Clement, A. Lagoubi, R. Tenne and M. Neumann-Spallart, Electrochim. Acta 37, 877 (1992).
2. Y. Arita and Y. Sunohara, J. Electrochem. Soc. 124, 285 (1977).
3. M. Matsumura and S. R. Morrison, J. Electroanal. Chem. 147, 157 (1983).
4. C. Levy-Clement, A. Lagoubi and M. Tomkiewicz, J. Electrochem. Soc. 141, 958 (1994).
5. V. Lehmann and H. Föll, J. Electrochem. Soc. 137, 653 (1990).
6. R. L. Smith and S. D. Collins, J. Appl. Phys. 71(8), R1 (1992).
7. X. G. Zhang, S. D. Collins and R. L. Smith, J. Electrochem. Soc. 136, 1561 (1989).
8. P. C. Searson, J. M. Macaulay and S. M. Prokes, J. Electrochem. Soc. 139, 3373 (1992).
9. M. J. Eddowes, J. Electroanal. Chem. 280, 297 (1990).
10. J. Stumper and L. M. Peter, J. Electroanal. Chem. 309, 325 (1991).
11. R. Memming and G. Schwandt, Surf. Sci. 4, 109 (1966).
12. D. R. Turner, J. Electrochem. Soc. 105, 702 (1958).
13. M. J. Eddowes, J. Electrochem. Soc. 137, 3514 (1990).
14. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
15. A. Venkeateswara Rao, F. Ozanam and J. N. Chazalviel, J. Electrochem. Soc. 138, 153 (1991).
16. Y. Kang and J. Jorné, 1998, in preparation.
17. S. M. Sze, Semiconductor Devices: Physics and Technology, John Wiley and Sons, New York, 1985.
18. V. M. Dubin, Surf. Sci. 274, 82 (1992).