Relationship of processing parameters to photoluminescence intensity and mechanical failure in thick porous silicon layers

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1441-1446

  Chang, W K ^a   Gleason, K K ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; FAILURE (MECHANICAL); PASSIVATION; PHOTOLUMINESCENCE; THICK FILMS;

MECHANICAL STABILITY; PHOTOLUMINESCENCE INTENSITY; SURFACE PASSIVATION;

POROUS SILICON;

EID: 0031125247     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837609     Document Type: Article

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