Preparation of Al doped PZT thin films using a sol-gel method

Materials Research Society Symposium - Proceedings

Volumn 596, Issue , 2000, Pages 223-228

  Iijima, T ^a   Sanada, N ^a   Hiyama, K ^b   Tsuboi, H ^b   Okada, M ^b  

^a TOHOKU NATL INDUST RES INSTITUTE   (Japan)

^b YAMAHA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); FATIGUE OF MATERIALS; FERROELECTRICITY; FILM PREPARATION; LEAD COMPOUNDS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SOL-GELS; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

CAPACITOR CELL STRUCTURE; CAPACITOR STRUCTURE; FERROELECTRIC PROPERTIES; LEAD ZIRCONATE TITANATE THIN FILMS; SEED LAYER PROCESS;

THIN FILMS;

EID: 0033713988     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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