Large diameter PVT growth of bulk 6H SiC crystals

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Snyder, D W ^a   Heydemann, V D ^a   Everson, W J ^a   Barrett, D L ^a  

^a II VI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS; SUBLIMATION; SUBSTRATES; SYNTHESIS (CHEMICAL);

BOULES; HOT ZONE GEOMETRY; MICROPIPES; PHYSICAL VAPOR TRANSPORT (PVT);

SILICON CARBIDE;

EID: 0033713819     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. V. D. Heydemann, N. Schulze, D. L. Barrett, G. Pensl, Appl. Phys. Lett. 69 (1996), p. 3728
2. G. Augustine, H. McD. Hobgood, V. Balakrishna, G. Dunne, R. H. Hopkins, phys. stat. sol. (b) 202 (1997), p. 137
3. R. C. Glass, D. Henshall, V. F. Tsvetkov, C. H. Carter, Jr., phys. stat. sol. (b) 202 (1997), p. 149
4. E. Sanchez, presented at Electronic Materials EMC 99, to be published in J. Electron. Mat.
5. V. D. Heydemann, N. Schulze, D. L. Barrett, G. Pensl, Diamond Rel. Mat. 6 (1997), p. 1262