Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering

Materials Research Society Symposium - Proceedings

Volumn 604, Issue , 2000, Pages 3-8

  Kalpat, S ^a   Du, X ^a   Abothu, I R ^b   Akiba, A ^c   Goto, H ^c   McKnistry, S Trolier ^a   Uchino, K ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c OMRON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL ORIENTATION; DIELECTRIC LOSSES; ELECTRIC FIELDS; FILM GROWTH; FILM PREPARATION; HYSTERESIS; PERMITTIVITY; POLARIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTING LEAD COMPOUNDS; SPUTTERING;

LEAD ZIRCONIUM TITANATE; REACTIVE RF SPUTTERING; SQUARE LIKE HYSTERESIS LOOPS;

THIN FILMS;

EID: 0033709864     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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