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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2236-2240

Direct measurement of transient drain currents in partially-depleted SOI N-channel MOSFETs using a nuclear microprobe for highly reliable device designs

(10) Iwamatsu, Toshiaki a Nakayama, Kouichi b Takaoka, Hiromichi b Takai, Mikio b Yamaguchi, Yasuo a Maegawa, Shigeto a Inuishi, Masahide a Kinomura, Atsushi c Horino, Yuji c Nlshimura, Tadashi a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

b OSAKA UNIVERSITY (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Body tied structure; Irradiation; Microprobe; MOSFET; Proton; SOI

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRODES; LSI CIRCUITS; MOSFET DEVICES; PROTON IRRADIATION; TRANSIENTS;

BODY TIED STRUCTURE; MICROPROBES; TRANSIENT DRAIN CURRENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033707480 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2236 Document Type: Article

Times cited : (9)

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