DC and RF characterization of different heterojunction interband tunneling diodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 146-149

  El Zein, Nada ^a   Deshpande, Mandar ^a   Kramer, Gary ^a   Lewis, Jonathan ^a   Nair, Vijay ^a   Kyler, Marilyn ^a   Allen, Susan ^a   Goronkin, Herb ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION INTERBAND TUNNEL DIODES (HITD); HETEROJUNCTION INTERBAND TUNNELING FIELD EFFECT DIODES (HITFET);

CURRENT DENSITY; GATES (TRANSISTOR); HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

TUNNEL DIODES;

EID: 0033706623     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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