Dopant distribution in selectively regrown InP:Fe and InGaP:Fe studied by time-resolved photoluminescence

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 518-521

  Gaarder, A ^a   Barrios, C Angulo ^a   Messmer, E Rodriguez ^a   Lourdudoss, S ^a   Marcinkevicius, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM GALLIUM PHOSPHIDE;

ELECTRIC INSULATING MATERIALS; ETCHING; IRON; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

QUANTUM WELL LASERS;

EID: 0033706423     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. S. Lourdudoss and O. Kjebon, IEEE J. Selected Topics in Quantum Electronics 3,749 (1997).
2. th Int. Conf: on InP and Related Materials, Hyanis, MA (IEEE, Piscataway, 1997) p. 55.
3. M. Hammar, E. R. Messmer, M. Luzuy, S. Anand, S. Lourdudoss, and G. Landgren, Appl. Phys. Lett. 72, 815 (1997).
4. D. Söderström, S. Marcinkevicius, S. Karlsson, and S. Lourdudoss, Appl. Phys. Lett. 70, 3374 (1997).
5. C. Angulo Barrios, E. Rodriguez Messmer, M. Holmgren, and S. Lourdudoss, "Semi-Insulating GalnP:Fe and GaAs:Fe regrowth around GaAs/AlGaAs laser mesas", submitted to 3rd Int. Conf. on Materials for Microelectronics, 16-17 October 2000, Dublin, Ireland.
6. A. Cesna, D. Söderström, S. Marcinkevicius, and S. Lourdudoss, J. Appl. Phys. 85, 1234 (1999).