Preparation of Al- and Li-doped ZnO thin films by sol-gel method

Key Engineering Materials

Volumn , Issue 181-182, 2000, Pages 109-112

  Fujihara, Shinobu ^a   Sasaki, Chikako ^a   Kimura, Toshio ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Al Doping; I V Characteristic; Li Doping; Sol Gel; Thin Film; ZnO

Indexed keywords

ALUMINUM; CRYSTAL ORIENTATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FILM PREPARATION; LITHIUM; SOL-GELS; TEMPERATURE; ZINC OXIDE;

HEAT TREATMENT TEMPERATURE; SHEET RESISTANCE;

THIN FILMS;

EID: 0033705766     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Article

References (11)

1. F.C.M. van de Pol, Ceram. Bull., 69 (1990), p. 1959.
2. A. Onodera, N. Tamaki, Y. Kawamura, T. Sawada and H. Yamashita, Jpn. J. Appl. Phys., 35 (1996), p. 5160.
3. A. Onodera, N. Tamaki, K. Jin and H. Yamashita, Jpn. J. Appl. Phys., 36 (1997), p. 6008.
4. A. Onodera, N. Tamaki, K. Yoshio, H. Satoh, T. Takama and H. Yamashita, "Novel Ferroelectricity in Polar Semiconductor ZnO by Li-Substirution," Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics, Edited by E. Colla, D. Damjanovic and N. Setter, (The Institute of Electrical and Electronic Engineers, Inc., 1998), pp. 475-478.
5. M. Joseph, H. Tabata and T. Kawai, Appl. Phys. Lett., 74 (1999), p. 2534.
6. E.D. Kolb and R.A. Laudise, J. Am. Ceram. Soc., 49 (1966), p. 302.
7. J. Hu and R.G. Gordon, J. Appl. Phys., 71 (1992), p. 880.
8. H. Hu and S.B. Krupanidhi, J. Mater. Res., 9 (1994), p. 1484.
9. P. Bhattaacharya, K. Park and Y. Nishioka, Jpn. J. Appl. Phys., 33 (1994), p. 5231.
10. M. Ohyama, H. Kozuka, T. Yoko and S. Sakka, J. Ceram. Soc. Jpn., 104 (1996), p. 296.
11. S.C. Chang, J. Vac. Sci. Tech., 17 (1980), p. 366.