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Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 511-513

Infrared photoluminescence from holmium ions in single-crystal silicon and holmium oxide

(6) Sobolev, N A a Emel'yanov, A M a Filin, Yu N a Melekh, B T a Nikolaev, Yu A a Yakimenko, A N b

a IOFFE INSTITUTE (Russian Federation)

b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRON TRANSITIONS; GROUND STATE; HOLMIUM; HOLMIUM COMPOUNDS; INFRARED RADIATION; ION IMPLANTATION; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

HOLMIUM OXIDE; INFRARED PHOTOLUMINESCENCE; SOLID PHASE EPITAXY;

PHOTOLUMINESCENCE;

EID: 0033705284 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/15/6/304 Document Type: Article

Times cited : (1)

References (11)

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