Extended defects in Si wafers implanted with ions of rare-earth elements

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 116-121

  Vdovin, V I ^a   Yugova, T G ^b   Sobolev, N A ^c   Shek, E I ^c   Makovijchuk, M I ^d   Parshin, E O ^d  

^a Inst Chem Prob of Microlectron   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d Institute of Microelectronics   (Russian Federation)

Author keywords

Erbium; Extended defects; Implantation; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DYSPROSIUM; ERBIUM; ETCHING; HOLMIUM; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

EXTENDED DEFECTS; NOMARSKI MICROSCOPY;

ION IMPLANTATION;

EID: 0032760519     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00564-3     Document Type: Article

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