Monolithic PIN-HEMT photoreceiver integration

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 333-336

  Rondeau, G ^a   Biblemont, S ^a   Decobert, J ^a   Post, G ^a  

^a OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORECEIVER;

AMPLIFIERS (ELECTRONIC); BANDWIDTH; ELECTRON BEAM LITHOGRAPHY; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; METALLORGANIC VAPOR PHASE EPITAXY; MICROELECTRONIC PROCESSING; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

PHOTODIODES;

EID: 0033703915     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2000.850300     Document Type: Article

References (8)

1. P. Fay et al., "High-speed optoelectronic receivers for fiber optic communications", IEEE circuits and devices, p. 16, September 1998
2. W. Kuebart et al., "High sensitivity InP-based monolithically integrated pin-HEMT Receiver-OEIC's for 10Gb/s", IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 9, p. 2334, September 1995
3. th August 1997
4. A. Umbach et al., "Monolithic pin-HEMT photoreceiver on InP with 27 GHz Bandwidth", Electronics Letters, Vol. 32, No. 23, p.2142, 7th November 1996
5. T. Enoki et al., "Design and Characteristics of InGaAs/InP Composite-Channel HFET's", IEEE Transactions on Electron Devices, Vol. 42, No. 8, p. 1413, August 1995
6. J. Decobert et al., "Highly resistive FET buffer layers on InP grown by LPMOVPE, PRM 1997, Hyannis, Cape Cod, USA
7. J. Decobert et al., "Doping optimizations for InGaAs/InP composite channel HEMTs", Joumal of Crystal Growth 195, p. 681,1998
8. G.R. Antell et al., "Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy", Applied Physics Letters 53 (9), 29 August 1988