Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidth

Electronics Letters

Volumn 32, Issue 23, 1996, Pages 2142-2143

  Umbach, A ^a   Van Waasen, S ^b   Auer, U ^b   Bach, H G ^a   Bertenburg, R M ^b   Breuer, V ^a   Ebert, W ^a   Janssen, G ^b   Mekonnen, G G ^a   Passenberg, W ^a   Schlaak, W ^a   Schramm, C ^a   Seeger, A ^a   Tegude, F J ^b   Unterborsch G ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

High electron mobility transistors; Indium phosphide; Integrated optoelectronics; Optical receivers

Indexed keywords

BANDWIDTH; DIGITAL COMMUNICATION SYSTEMS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; MICROWAVE AMPLIFIERS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL WAVEGUIDES; PHOTODIODES; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRAVELING WAVE TUBES;

MONOLITHICALLY INTEGRATED PHOTORECEIVERS;

PHOTODETECTORS;

EID: 0030574148     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961421     Document Type: Article

References (6)

1. LUNARDI, L.M., CHANDRASEKHAR, S., GNAUCK, A.H., BURRUS, C.A., DENTAI, A.G., and RIOS, J.M.M.: '15Gbit/s pin/HBT optoelectronic integrated photoreceiver module realised using MOVPE material', Electron. Lett., 1995, 31, (14), pp. 1185-1186
2. FAY, F., WOHLMUTH, W., CANEAU, C. and ADESIDA, I.: '18.5GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55μm wavelength communication systems', IEEE Photonics Technol. Lett., 1996, 8, (5), pp. 679-681
3. KLEPSER, B.-U.H., SPICHER, J., BECK, M., BERGAMASCHI, C., PATRICK, W., and BACHTHOLD, W.: 'High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18Ghz bandwidth', Electron. Lett., 1995, 31, (21), pp. 1831-1833
4. UMBACH, A., TROMMER, D., SIEFKE, A., and UNTERBÖRSCH, G.: '50GHz operation of waveguide integrated photodiode at 1.55μm'. Proc. 21st European Conf. on Optical Communication (ECOC), Brussels, Belgium, 17-21 September 1995, pp. 1075-1078
5. VANWAASEN, S., JANSSEN, G., BERTENBURG, R.M., REUTER, R., and TEGUDE, F.J.: 'Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20Gbit/s optoelectronic receivers'. Proc. 8th Int. Conf. InP and Rel. Mat. (IPRM '96), Schwäbisch Gmünd, Germany, 22-25 April 1996, pp. 642-645
6. SCHRAMM, C., SCHLAAK, W., MEKONNEN, G.G., PASSENBERG, W., UMBACH, A., SEEGER, A., WOLFRAM, P., and BACH, H.-G.: 'Design and realisation of waveguide-integrated AlInAs/GaInAs HEMTs regrown by MBE for high-bit rate optoelectronic receivers on InP', Electron. Lett., 1996, 32, (12), pp. 1139-1141