Doping optimizations for InGaAs/InP composite channel HEMTs

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 681-686

  Decobert J ^a,b   Rondeau, G ^a   Maher, H ^a   Ladner, C ^a   Falcou, A ^a   Biblemont, S ^a   Post, G ^a  

^a OPTO+   (France)

^b ORANGE LABS   (France)

Author keywords

Composite channel; Delta doping; Hall mobility; HEMT; MOVPE; Segregation

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; MODULATORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HALL MOBILITY; LOW-PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032477199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00590-9     Document Type: Article

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