Characteristics of HgCdTe/CdTe hetero-epitaxial system and mid-wave diodes on 2 inch silicon

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 975-979

  Dhar, N K ^a   Zanatta, J P ^b   Ferret, P ^b   Million, A ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; HETEROJUNCTIONS; MERCURY COMPOUNDS; MORPHOLOGY; PHOTODIODES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SURFACE ROUGHNESS;

HETERO-EPITAXIAL SYSTEMS; MIDWAVE INFRARED LINEAR DIODE ARRAYS;

MOLECULAR BEAM EPITAXY;

EID: 0032638480     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01503-6     Document Type: Article

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