Improved annealing process for 6H-SiC p+-n junction creation by Al implantation

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Lazar, M ^a   Ottaviani, L ^a   Locatelli, M L ^a   Planson, D ^a   Canut, B ^b   Chante, J P ^a  

^a CNRS   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CRYSTALLIZATION; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL ACTIVATION;

SILICON CARBIDE;

EID: 0033702055     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. L. Ottaviani, D. Planson, M.L. Locatelli, J.P. Chante, B. Canut and S. Ramos, Materials Science Forum Vols. 264-268 (1998) p. 709;
2. L. Ottaviani, M.L. Locatelli, D. Planson, K. Isoird, J.P. Chante, E. Morvan, P. Godignon, Materials Science and Engineering B Vols. 61-62 (1999) p. 424;
3. L. Ottaviani, E. Morvan, M.L. Locatelli, D. Planson, P. Godignon, J.P. Chante, A. Senes to be published in Solid State Electronics;
4. T. Troffer, M. Shadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H.P. Strunk, M. Maier Phys. Stat. Sol. (a) 162 (1997) p. 277;
5. R. Fair, K.S. Jones and G.A. Rozgony, Rapid thermal processing: Science and technology Academic Press, San Diego, (1993).