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Volumn 144, Issue 1, 1997, Pages 23-29

Self-consistent simulation of (aiga)lnp/galnp visible lasers

Author keywords

(alga)inp gainp risible lasers; Band bending; Band edge spikes

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT EMISSION; OPTICAL COATINGS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031072125     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971071     Document Type: Article
Times cited : (10)

References (16)
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    • (1994) IEEE J. Quantum Electron. , vol.30 , Issue.8 , pp. 1691-1700
    • Gault, M.1    Mawby, P.2    Adams, A.R.3    Towers, M.4
  • 8
    • 0000784328 scopus 로고
    • Growth of high-quality InGaAlP epilayers by MOCVD using methyl metalorganics and their applications to visisble semiconductor lasers
    • OHBA, Y., ISHIKAWA, M., SUGAWARA, H., YAMAMOTO, M., and NAKANISI, T Growth of high-quality InGaAlP epilayers by MOCVD using methyl metalorganics and their applications to visisble semiconductor lasers J. Cryst. Growth, 1986, 77, pp. 374-379
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    • Ohba, Y.1    Ishikawa, M.2    Sugawara, H.3    Yamamoto, M.4    Nakanisi, T.5
  • 9
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    • Statistics of recombination of holes and
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    • Shockley, W.1    Read, W.T.2
  • 12
    • 0027594142 scopus 로고
    • Line broadening due to carrier-carrier scattering in quantum well heterostructures
    • HAMILTON, R.A.H., and REES, P Line broadening due to carrier-carrier scattering in quantum well heterostructures Semicond. Sci. Tech.. 1993, 8, pp. 728-734
    • (1993) Semicond. Sci. Tech.. , vol.8 , pp. 728-734
    • Hamilton, R.A.H.1    Rees, P.2
  • 15
    • 0000536410 scopus 로고
    • Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
    • WATANABE, M.O., and OHBA, Y Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique Appl. Phys. Lett., 1987, 50, pp. 906-908
    • (1987) Appl. Phys. Lett. , vol.50 , pp. 906-908
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  • 16
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    • Heterojunction band offsets and effective masses in III-V quaternary alloys
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    • Krijn, M.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.