Preparation and properties of TiN and AlN films from alkoxide solution by thermal plasma CVD method

Thin Solid Films

Volumn 370, Issue 1, 2000, Pages 137-145

  Shimada, Shiro ^a   Yoshimatsu, Motoki ^a   Nagai, Hideaki ^b   Suzuki, Masaaki ^b   Komaki, Hisashi ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JEOL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC CONDUCTIVITY; FILM PREPARATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THICKNESS MEASUREMENT; THIN FILMS; VICKERS HARDNESS TESTING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM NITRIDES; ALUMINUM TRIBUTOXIDE; THERMAL PLASMA CHEMICAL VAPOR DEPOSITION; TITANIUM TETRACTOXIDE; VICKERS MICROHARDNESS;

TITANIUM NITRIDE;

EID: 0033700667     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00935-4     Document Type: Article

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