A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma

Thin Solid Films

Volumn 292, Issue 1-2, 1997, Pages 124-129

  Kim, Jong Seok ^a   Jun, Byung Hyuk ^a   Lee, Eung Jik ^a   Hwang, Chan Yong ^b   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Chemical vapour deposition (CVD); Metallization; Plasma processing and deposition; Titanium nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; GRAIN SIZE AND SHAPE; HYDROGEN; NITROGEN; PLASMA APPLICATIONS; PLASMAS; TEMPERATURE; THERMAL EFFECTS; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CRYSTALLINITY; IMPURITY CONTENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTANTS; TITANIUM TETRACHLORIDE;

THIN FILMS;

EID: 0031553460     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09098-0     Document Type: Article

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