Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 199-202

  Fujiwara, Y ^a   Ito, T ^a   Ofuchi, H ^a   Tsuchiya, J ^a   Tanigawa, A ^a   Tabuchi, M ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; GALLIUM PHOSPHIDE; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LUMINESCENCE; TEMPERATURE;

EMISSION LINES; ER CONCENTRATIONS; ER-DOPED; EXAFS ANALYSIS; LOW TEMPERATURE PHOTOLUMINESCENCE; LUMINESCENCE CENTERS; REACTOR PRESSURES; SHARP EMISSION;

ERBIUM COMPOUNDS;

EID: 0343875632     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711615     Document Type: Conference Paper

References (9)

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