Thermal stability and etching characteristics of electron beam deposited SiO and SiO2

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 283-287

  LaRoche, J R ^a   Ren, F ^a   Lothian, R ^b   Hong, J ^a   Pearton, S J ^a   Lambers, E ^a   Hsu, C H ^c   Wu, C S ^d   Hoppe, M ^d  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Multiplex Inc   (United States)

^c FENG CHIA UNIVERSITY   (Taiwan)

^d NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DRY ETCHING; ELECTRON BEAMS; ELLIPSOMETRY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICA; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

ELECTRON BEAM DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033700335     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591184     Document Type: Article

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