Use of amorphous SiO and SiO2 to passivate AuGe-based contact for GaAs integrated circuits

Electrochemical and Solid-State Letters

Volumn 2, Issue 8, 1999, Pages 395-397

  LaRoche, J R ^a   Ren, F ^a   Lothian, J R ^b   Hong, J ^a   Pearton, S J ^a   Lambers, E ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON BEAMS; ETCHING; GOLD COMPOUNDS; OHMIC CONTACTS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICA;

ELECTRON BEAM DEPOSITION; GALVANIC EFFECT; SHEET RESISTANCE; WET ETCHING;

AMORPHOUS SILICON;

EID: 0032626061     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390849     Document Type: Article

References (6)

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