Manufacturing issues for large semi-insulating indium phosphide substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 514-517

  Ware, Rowland ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMI-INSULATING MATERIALS;

ELECTRIC INSULATING MATERIALS; ELECTRIC PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033700082     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)

1. I.J.Mikkelson, GaAs Mantech Conference Digest of Papers, 1999, p55
2. R.M.Ware, Advance abstract for this paper.
3. G.Iseler, Proceedings IPRM4, 1992, p.266.
4. I.R.Grant, First International School on Crystal Growth Technology, Beatenberg, Switzerland, 1998 p414.
5. J-P Farges, J. Cryst.Growth, 59 (1982) 665-668
6. S.Tong-nien, L.Szu-lin and K.Shu-tseng, Semi-Insulating III-V Materials, Evian 1982 Ed.S Makram-Ebeid and B.Tuck p.61
7. W.M. Higgins, G.W. Iseler, D.F. Bliss, G. Bryant, V. Tassev, I. Jafri, R.M. Ware and D.J. Carlson This Conference.
8. W.Gault, E..Momberg and J.E.Clemans, J.Cryst. Growth.74, 279 (1986)
9. E.P.A.Metz, R.C.Miller, and R.Mazelsky, J.Appl. Phys.33 (1962) 2016
10. th Int. Conf. on Solid State Materials and Devices 63 (1984)
11. T.Asahi, M.Uchido, K.Kainosho and O.DOA, IPRM 11 (1999), 273.
12. D.Wolf, G.Hirt, F.Mose1, G.Muller, and J Volkl, Mat. Sci.Eng.B28 (1994) 115-119
13. K.Kainosho, O.DOA, G,Hirt and G.Muller, Mat.Res.Symp.Proc. 325(1994) 101
14. G.Wolf, G.Hirt, and G.Muller, J. Electronic Materials 24 (1 995) 93
15. Zappettini, R.Fornari and R.Capelletti, Mat.Sci.Eng. B45, (1997) 147-151
16. W.M.Higgins, R.M. Ware, K. J.O'Heam, M.S.Tiernan, T.M.Mirandi, D.J.Carlson, R.C.Newman and B.R.Davidson, IPRM 11, 1999,263
17. R.Fornari, E.Gilioli,M.Moriglioni, M.Thirumavalan and A.Zapettini, J.Cryst.Growth 166( 1996) 572-577.
18. G.Hirt, D.Hofinann,F.Mosel,N.Schafer and G.Muller, J.Electronic Mat. 20 (1991) 1065
19. T.Takaanohashi and N.Nakajima J.Appl.Phys.65 (1989) 3933
20. I.Grant,L.Li, D.Rumsby and R.M. Ware, J.Cryst.Growth 64, (1983) 32-36
21. C.P.Ewels, S.Oberg, R. Jones, B.Pajot and P.R.Bridden, Semicond.Sci.Technol. 11 (1996) 502-507.