Influence of whole boule annealing on the properties of semi-insulating indium phosphide

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 263-266

  Higgins, W M ^a   Ware, R M ^a   O'Hearn, K J ^a   Tiernan, M S ^a   Mirandi, T M ^a   Carlson, D J ^a   Newman, R C ^a   Davidson, B R ^a  

^a ISBU   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; INGOTS; LIGHT POLARIZATION; RESIDUAL STRESSES; SEMICONDUCTOR GROWTH;

LIQUID ENCAPSULATED CZOCHRALSKI (LEC) PROCESS; SEMI-INSULATING INDIUM PHOSPHIDE; WHOLE BOULE ANNEALING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032645964     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)