n-type doping induced losses in 1.3/1.55 μm distributed Bragg reflectors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 388-391

  Mogg, S ^a   Salomonsson, F ^a   Asplund, C ^a   Plaine, G ^a   Chitica, N ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; DISTRIBUTED BRAGG REFLECTORS (DBR);

COMPOSITION EFFECTS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

MIRRORS;

EID: 0033700076     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

1. D.I. Babic, J. Piprek, K. Streubel, R.P. Mirin, N.M. Margalit, D.E. Mars, J.E. Bowers and E.L. Hu, "Design and Analysis of Double-Fused 1.55-μm Vertical-Cavity Lasers", IEEE J. Quant. El., Vol. 33 (8), pp. 1369-1383, (1997)
2. D.L. Huffaker and D.G. Deppe, "Intracavity Contacts for Low-Threshold Oxide-Confined Vertical-Cavity Surface-Emitting Lasers", IEEE Phot. Techn. Lett., Vol. 11 (8), pp. 934-936 (1999).
3. 0 of 132 K at room temperature", Electron. Lett., Vol. 34 (20), pp. 1947-1949, (1998)
4. C.-A. Berseth, A. Schönberg, O. Dehaese, K. Leifer, A. Rudra, and E. Kapon, "Experimental method for highaccuracy reflectivity-spectrum measurements", Appl. Optics, Vol. 37 (28), pp. 6671-6676, (1998)
5. M.A. Kwok, J.M. Herbelin, R.H. Ueunten, "Cavity phase shift method for high reflectance measurements at mid-infrared wavelengths", Optical Eng., Vol. 21 (6), pp. 979-982 (1982)
6. K. Streubel, J. Wallin, L.Zhu, G. Landgren, I. Queisser, "High-reflective 1.5 μm GaInAsp/InP Bragg reflectors grown by metal organic vapor phase epitaxy", Mat. Sci. and Eng., Vol. B28, pp. 285-288, (1994)
7. 0.47As for 1.64 μm wavelength", Appl. Phys. Lett., Vol. 56 (4), pp. 315-317, (1990)
8. R. Baets, P. Demeester, and P.E. Lagasse, "Highreflectivity GaAs-AIGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters", J. Appl. Phys., Vol. 62 (2), pp. 723-726, (1987)
9. G. Bauer, W. Richter, Optical Characterization of Epitaxial Semiconductor Lavers. Springer Verlag 1996, pp. 343-346, and references therein.
10. K. Matney, M.S. Goorsky, "Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis", J. Cryst. Growth, Vol 148, pp. 327-335, (1995)
11. W. Walukiewicz, "Activation and diffusion of shallow impurities in compound semiconductors", Inst. Phys. Conf. Ser., vol. 141, pp. 259-264, (1995)
12. P.D. Floyd and J.L. Merz, "Optical properties of disordered GaAs/(Al,Ga)As distributed Bragg reflectors", J. Appl. Phys., Vol. 75 (12), pp. 7666-7668, (1994)
13. M.K. Sanyal, A. Datta, A.K. Srivastava, B.M. Arora, S. Banerjee, P. Chakraborty, F. Caccavale, 0. Sakata, H. Hashizume, "Interfacial profile of a Bragg Mirror", Appl. Surf. Sci., Vol. 133, pp. 98-102, (1998)