Study of electromigration damage in Al interconnect lines inside a SEM

Crystal Research and Technology

Volumn 35, Issue 6, 2000, Pages 721-730

  Buerke, Axel ^a,b   Wendrock, Horst ^a   Wetzig, K ^a  

^a IFW DRESDEN   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; ELECTRON DIFFRACTION; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HEAT FLUX; OPTICAL INTERCONNECTS; SCANNING ELECTRON MICROSCOPY;

ALUMINUM INTERCONNECT LINES; ELECTROMIGRATION DAMAGE; ELECTRON BACKSCATTER DIFFRACTION; GRAIN BOUNDARY DIFFUSION; GRAIN ORIENTATION; MISORIENTATION;

ALUMINUM ALLOYS;

EID: 0033695365     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200007)35:6/7<721::AID-CRAT721>3.0.CO;2-2     Document Type: Article

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