Noise performance of submicron HEMT channels under low power consumption operation

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 1233-1236

  Miranda, J M ^a   Zirath, H ^b,c   Garcia, M ^d   Sebastian, J L ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Ericsson Microwave Systems AB   (Sweden)

^d RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW POWER CONSUMPTION; POLPIESZALSKI MODEL;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; SCATTERING PARAMETERS; SIGNAL NOISE MEASUREMENT; TEMPERATURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033694138     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2000.863582     Document Type: Article

References (12)

1. A. Cappy, "Noise Modeling and Measurement Techniques", IEEE Trans. on Microwave Theory and Techniques, 36 (1), pp. 1-10, 1988.
2. F. Danneville, H. Happy, G. Dambrine, J. M. Belquin, A. Cappy, "Microscopic noise modeling and macroscopic noise models; How good a connection?" IEEE Trans. on Electron Devices, vol 41 no 5, pp. 779-786, 1994.
3. M. W. Pospieszalski, "On the Measurement of Noise Parameters of Microwave Two-Port", IEEE Trans. on MTT, vol34 no 4, pp. 256-458, 1986.
4. R. A Pucel, H. A. Haus, H. Statz, "Signal and noise properties of gallium arsenide microwave field effect transistors", Advances in Electronics and Electron Physics, vol38, New York Academic Press, 1975.
5. P. Heymann, M. Rudolph, H. Prinzler, R. Doemer, L. Klapproth, G. Bok, "Experimental Evaluation of Microwave Field Effect Transistor Noise Models", IEEE Trans on MTT, vol47 no 2, pp. 156-163,1999.
6. M. Garcia, J. Stenarson, K. Yhland, H. Zirath,"A New Extraction Method for the Two-Parameter FET Temperature Noise Model" IEEE Trans on MTT, vol46 no 11, pp. 1679-1685, 1998.
7. N. Rorsman, M. Garcia, C. Karlsson and H. Zirath, "Accurate Small Signal Modeling of HFET's for Millimeter Wave Applications", IEEE Trans. on MTT, vol 44 no 3, pp. 432-437, 1996.
8. M. Garcia, N. Rorsman, K. Yhland, H. Zirath, I. Angelov, "Fast, Automatic and Accurate HFET Small-Signal Characterization", Microwave Journal, pp. 102-117, July 1997.
9. M. W. Pospieszalski, "Modeling of Noise Paramaters of MESFETs and MODFET and their Frequency and Temperature Dependence", IEEE Trans. on MTT, vol 37 no 9, pp. 1340-1350, 1989.
10. I. M. Miranda, H. Zirath, J. L. Sebastib, "Noise Modeling of 0.15 pm Gate Length HEh4Ts based on AlGaAshGaAs Channels", Proceedings of the GHz-2000 International Conference, Goteborg, Sweden, March 2000.
11. A.Matulionis, Hot-electron noise in HEMT channels and other 2-DEG structures (invited paper), in Proc. 5th European Gallium Arsenide and related 111-V compounds Applications Symposium-GaAs'97, Bologna, Italy, pp. 165-174, September 3-5, 1997.
12. V.Aninkevicius, B.Henle, E.Kohn, W.Leitch, J.Liberis, A.Matulionis, P.Sakalas, "Hot-electron noise in InGaAs-based channels", Proc. of 20th Workshop on Compound Semiconductor Devices and Integrated Circuits, Vilnius University Press, pp. 34-35, 1996.