Molecular beam epitaxy of Ru2Si3 on silicon

Thin Solid Films

Volumn 371, Issue 1, 2000, Pages 66-71

  Lenssen, D ^a   Lenk, S ^a   Bay, H L ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EVAPORATION; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; RUTHENIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

TEMPLATE TECHNIQUES;

SEMICONDUCTING FILMS;

EID: 0033689650     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01006-3     Document Type: Article

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