Annealing effects of Mg-doped GaN epilayers capped with SiO2 layers

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 62-68

  Lee, Cheul Ro ^a   Leem, Jae Young ^b   Ahn, Byung Guk ^a  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; ETCHING; MAGNESIUM; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS;

GALLIUM NITRIDE; VAN DER PAUW TECHNIQUE;

SEMICONDUCTING FILMS;

EID: 0033689424     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00376-6     Document Type: Article

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