Low voltage saturation of Pb(ZrxTi1-x)O3 films on (100)Ir/(100)(ZrO2)1-x(Y2O3) x/(100)Si substrate structure prepared by reactive sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2114-2118

  Horii, Sadayoshi ^a,b   Yokoyama, Seiji ^a   Kuniya, Takuji ^a   Horita, Susumu ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

Heteroepitaxial; Iridium; Low saturation voltage; PZT; Si; YSZ

Indexed keywords

ELECTRODES; FERROELECTRICITY; FILM PREPARATION; HYSTERESIS; IRIDIUM COMPOUNDS; MAGNETRON SPUTTERING; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES; THICK FILMS;

COERCIVE VOLTAGE; HETEROEPITAXY; LOW VOLTAGE SATURATION; REACTIVE SPUTTERING;

EPITAXIAL GROWTH;

EID: 0033689415     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2114     Document Type: Article

References (10)

1. J. L. Moll and Y. Tarui: IEEE Trans. Electron Device 10 (1963) 338.
2. T. Hirai, K. Teramoto, K. Nagashima, H. Koike and Y. Tarui: Jpn. J. Appl. Phys. 34 (1995) 4163.
3. R. Moazzami, P. D. Maniar, R. E. Jones, Jr., A. C. Campbell and C. J. Mogab: Tech. Dig. Int. Electon Device Meet. (IEEE, New York, 1992) 937.
4. K. R. Udayakumar, P. J. Schuele, J. Chen, S. B. Kurpanidhi and L. E. Cross: J. Appl. Phys. 77 (1995) 3981.
5. H. Miki and Y. Ohji: Jpn. J. Appl. Phys. 33 (1994) 5143.
6. L. E. Sanchez, S. Wu and I. K. Naik: Appl. Phys. Lett. 56 (1990) 2399.
7. D. J. Wouters, G. J. Norga and H. E. Maes: Mater. Res. Soc. Symp. Proc. 541 (1999) 381.
8. L. L. Boyer, N. Velasquez and J. T. Evans, Jr.: Jpn. J. Appl. Phys. 36 (1997) 5799.
9. Y. Fujisaki, Y. Shimamoto, K. Torii and Y. Matsui: Tech. Rep. IEICE ED98-244, SDM-197 (1999) 35 [in Japanese].
10. S. Horita, S. Horii and S. Umemoto: Jpn. J. Appl. Phys. 37 (1998) 5141.