A study of native defects in Ag-doped HgCdTe by positron annihilation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6661-6667

  Uedono, Akira ^c   Ozaki, Kazuo ^a   Ebe, Hiroji ^a   Moriya, Tsuyoshi ^b,c   Tanigawa, Shoichiro ^c   Yamamoto, Kosaku ^a   Miyamoto, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ag; Defect; Doppler broadening profile; HgCdTe; Lifetime; Monoenergetic positron beam; Positron annihilation; Vacancy

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; DOPPLER EFFECT; HEAT TREATMENT; PARTICLE BEAMS; SEMICONDUCTOR DOPING; SILVER;

MERCURY CADMIUM TELLURIDE; MONOENERGETIC POSITRON BEAMS; POSITRON ANNIHILATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031271209     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6661     Document Type: Article

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