ECR-MBE growth of GaN using hydrogen-nitrogen mixed gas plasma

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 627-631

  Chiba, Yasuo ^a   Araki, Tsutomu ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Columnar structure; Gan; Hydrogen; TEM

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; HYDROGEN; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; HYDROGEN NITROGEN MIXED GAS PLASMA; OPTICAL EMISSION SPECTROSCOPY; QUADRUPOLE MASS SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033688704     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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