Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 819-822

  Gustafson, B ^a   Suhara, M ^b   Furuya, K ^b   Samuelson, L ^a   Seifert, W ^a   Wernersson, L E ^a  

^a LUND UNIVERSITY   (Sweden)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; INSULATED WIRE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TUNGSTEN;

GALLIUM INDIUM PHOSPHIDE; RESONANT TUNNELING TRANSISTORS;

TRANSISTORS;

EID: 0033687212     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00067-9     Document Type: Article

References (16)

1. Chang, Esaki, Tsui, Appl. Phys. Lett. 25 (1974) 593.
2. Itskevich et al., Phys. Rev. B 54 (1996) 16 401.
3. Narihiro et al., Appl. Phys. Lett. 70 (1997) 105.
4. Reed et al., Phys. Rev. Lett. 60 (1988) 535.
5. Schmidt T.et al. Phys. Rev. Lett. 78:1997;1544.
6. Tarucha et al., Jpn. J. Appl. Phys. 36 (1997) 3917.
7. Griebel et al., J. Appl. Phys. 84 (1998) 6718.
8. Su et al., Phys. Rev. B 46 (1992) 7644.
9. Wernersson et al., Jpn. J. Appl. Phys. 36 (1997) L1628.
10. Wernersson et al., Appl. Phys. Lett. 71 (1997) 2803.
11. Wernersson et al., Appl. Phys. Lett. 79 (1999) 311.
12. Wernersson et al., Jpn. J. Appl. Phys. 34 (1995) 4414.
13. M. Suhara et al., Jpn. J. Appl. Phys., in press.
14. Wernersson et al., Phys. Rev. B 58 (1998) 4207.
15. Tsuchiya M.et al. Jpn. J. Appl. Phys. 30:1991;1164.
16. Oobo et al., Jpn. J. Appl. Phys. 37 (1998) 445.