Design and operation of mid-infrared light-emitting devices (λ≈11 μm) based on a chirped superlattice

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 44-50

  Page, H ^a   Sirtori, C ^a   Barbieri, S ^a   Kruck, P ^a   Stellmacher, M ^a   Nagle, J ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ENERGY GAP; INFRARED DEVICES; LIGHT TRANSMISSION; PHOTONS; SEMICONDUCTOR SUPERLATTICES;

CHIRPED SUPERLATTICES; MID-INFRARED LIGHT EMITTING DEVICES;

LIGHT EMITTING DIODES;

EID: 0033640185     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/308     Document Type: Article

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