Luminescence quenching in erbium-doped hydrogenated amorphous silicon

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 46-48

  Shin, Jung H ^a   Serna, R ^a   Van Den Hoven, G N ^a   Polman, A ^a   Van Sark, W G J H M ^b   Vredenberg, A M ^b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRON TRANSITIONS; ERBIUM; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; THERMAL EFFECTS; THIN FILMS;

CARRIER RECOMBINATION; EXCITATION WAVELENGTH; HYDROGENATED AMORPHOUS SILICON; LUMINESCENCE QUENCHING; NONRADIATIVE DECAY;

AMORPHOUS SILICON;

EID: 0029752464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116751     Document Type: Article

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