Photoluminescence and probe effect of Er-doped nanometer-sized Si materials

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 121-125

  Zhao, Xinwei ^a   Komuro, Shuji ^b   Isshiki, Hideo ^a   Maruyama, Shinya ^b   Aoyagi, Yoshinobu ^a   Sugano, Takuo ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

Erbium; Nanometer sized silicon; Photoluminescence; Porous silicon; Probe

Indexed keywords

ENERGY TRANSFER; ERBIUM; EXCITONS; IONS; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PROBES; SEMICONDUCTOR DOPING; THIN FILMS;

ELECTRON HOLE PAIRS; PROBE EFFECT;

POROUS SILICON;

EID: 0031547202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00896-3     Document Type: Article

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