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Volumn 355, Issue 1-3, 1996, Pages
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Structure analysis of the GaAs(001)-2 × 4 surface using medium energy ion scattering
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Author keywords
Gallium arsenide; Medium energy ion scattering (MEIS); Single crystal surfaces; Surface reconstruction; Surface structure
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Indexed keywords
CHEMICAL BONDS;
CRYSTAL ATOMIC STRUCTURE;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
BLOCKING DIPS;
MEDIUM ENERGY ION SCATTERING;
SURFACE RECONSTRUCTION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030173764
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00624-3 Document Type: Article |
Times cited : (4)
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References (19)
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