Broadband feedback amplifiers with AlInAs/ GaInAs transferred-substrate HBT

Electronics Letters

Volumn 34, Issue 13, 1998, Pages 1357-1358

  Agarwal, B ^a   Lee, Q ^a   Mensa, D ^a   Pullela, R ^a   Guthrie, J ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

DARLINGTON CONFIGURATION;

FEEDBACK AMPLIFIERS;

EID: 0032092969     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980887     Document Type: Article

References (5)

1. max transferredsubstrate heterojunction bipolar transistor IC technology', IEEE Electron Device Lett., 1998, 19, (3), pp. 77-79
2. RODWELL, M., JENSEN, J.F., STANCHINA, W.E., METZGER, R.A., RENSCH, D.B., PIERCE, M.W., KARGODORIAN, T.V., and ALLEN, Y.K.: '33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier', IEEE J. Solid-State Circuits, 1991, 26, (10), pp. 1378-1382
3. SANO, E., YAMAHATA, S., and MATSUOKA, Y.: '40GHz bandwidth amplifier IC using AlGaAs/GaAs ballistic collection transistors with carbon-doped bases', Electron. Lett., 1994, 30, (8), pp. 635-636
4. AGARWAL, B., MENSA, D., LEE, Q., PULLELA, R., GUTHRIE, J., SAMOSKA, L., and RODWELL, M.J.W.: 'A 50GHz feedback amplifier with AlInAs/GaInAs transferred-substrate HBT'. Int. Electron Device Meeting Tech. Dig., 1997, pp. 743-746
5. ARMIJO, C.T., and MEYER, R.G.: 'A new wideband Darlington amplifier', IEEE J. Solid-State Circuits, 1989, 24, (8), pp. 1105-1109