Tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 283-287

  Chan, Michael C Y ^a   Cheung, Elaine M T ^a   Li, E Herbert ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ENERGY GAP; INTERDIFFUSION (SOLIDS); LASER TUNING; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; NITRIDE SEMICONDUCTORS; QUANTUM WELL INTERMIXING; THERMAL ANNEALING; THERMAL INTERDIFFUSION;

NITRIDES;

EID: 0033528940     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00342-0     Document Type: Article

References (7)

1. Nakamura S. IEEE J. Sel. Top. Quantum Electron. 3:1997;712-718.
2. Nakamura S., Senoh M., Iwasa N., Nagahama S., Yamada T., Matsushita T. Jpn. J. Appl. Phys. Lett. 34:1995;1332-1335.
3. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y. Jpn. J. Appl. Phys. 35:1996;L74-76.
4. Chuang S.L., Chang C.S. Semicond. Sci. Technol. 12:1997;252-263.
5. Yuan S., Kim Y., Jagadish C., Burke P.T., Gal M., Zou J., Cai D.Q., Cockayne D.J.H., Cohen R.M. Appl. Phys. Lett. 70:1997;1269-1271.
6. Burkner S., Maier M., Larkins E.C., Rothemound W., O'Reilly E.P., Ralston J.D. J. Electron. Mater. 24:1995;805-812.
7. Gontijo I., Krauss T., Marsh J.H., De La Rue R.M. IEEE J. Quant. Electron. 30:1994;189-194.